silicon planar epitaxial pnp transistor semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8669 issue 1 page 1 of 3 BDS18SMD ? high voltage ? hermetic ceramic surface mount package ? ideally suited for power linear, switching and general purpose applications ? screening options available absolute maximum ratings (t c = 25c unless otherwise stated) v cbo collector ? base voltage -120v v ceo collector ? emitter voltage -120v v ebo emitter ? base voltage -5v i c continuous collector current -8a i b base current -2a p d total power dissipation at t c 75c 80w derate above 75c 0.64w/c t j junction temperature range -65 to +200c t stg storage temperature range -65 to +200c thermal properties symbols parameters max. units r jc thermal resistance, junction to case 1.56 c/w ** this datasheet supersedes document 3346
silicon planar epitaxial pnp transistor BDS18SMD semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8669 issue 1 page 2 of 3 electrical characteristics (t c = 25c unless otherwise stated) symbols parameters test conditions min. typ max. units v (br)ceo (1) collector-emitter breakdown voltage i c = -10ma i b = 0 -120 v i ceo collector cut-off current v ce = -60v i b = 0 -0.1 ma i cbo collector cut-off current v cb = -120v i e = 0 -20 i ebo emitter cut-off current v eb = -5v i c = 0 -10 a i c = -0.5a v ce = -2v 40 250 h fe (1) forward-current transfer ratio i c = -4a v ce = -2v 15 150 i c = -0.5a i b = -0.05a -0.4 v ce(sat) (1) collector-emitter saturation voltage i c = -4a i b = -0.4a -1.5 v be(on) (1) base-emitter voltage i c = -1.0a v ce = -2v -1.4 v dynamic characteristics i c = -0.5a v ce = -4v f t transition frequency f = 5mhz 10 mhz i c = -2a v cc = -80v t on turn-on time i b1 = -0.2a 0.5 t s storage time i c = -2a v cc = -80v 1.5 t f fall time i b1 = - i b2 = -0.2a 0.3 s notes notes notes notes (1) pulse width 300us, 2%
silicon planar epitaxial pnp transistor BDS18SMD semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8669 issue 1 page 3 of 3 mechanical data dimensions in mm (inches) smd1 (to - 276ab) underside view pad 1 ? base pad 2 ? collector pad 3 - emitter 3.60 (0.142) max. 3.70 (0.146) 3.41 (0.134) 3.70 (0.146) 3.41 (0.134) 0.89 (0.035) min. 4.14 (0.163) 3.84 (0.151) 10.69 (0.421) 10.39 (0.409) 9.67 (0.381) 9.38 (0.369) 11.58 (0.456) 11.28 (0.444) 16.02 (0.631) 15.73 (0.619) 0.50 (0.020) 0.26 (0.010) 0.76 (0.030) min. 1 3 2
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